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DSM80101M-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DSM80101M-7
- Package: SOT-23-6
- Datasheet:
- Stock: 7542
- Description: DSM80101M-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 600mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Dual |
| Transistor Type | NPN + Diode (Isolated) |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 300mV |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 500mA |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.6mm |
| RoHS Status | ROHS3 Compliant |
DSM80101M-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 10mA 1V DC current gain.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.A constant collector voltage of 500mA is necessary for high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor can take a breakdown input voltage of 80V volts.Maximum collector currents can be below 500mA volts.
DSM80101M-7 Features
the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
DSM80101M-7 Applications
There are a lot of Diodes Incorporated DSM80101M-7 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
