DSA200200L

DSA200200L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available at Feilidi


  • Manufacturer: Panasonic Electronic Components
  • NO: 590-DSA200200L
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 5236
  • Description: DSA200200L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Max Frequency 130MHz
Transition Frequency 160MHz
Collector Emitter Saturation Voltage -600mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 120
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e6
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
HTS Code 8541.21.00.75
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DSA2002
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type PNP
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage 50V

DSA200200L Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 150mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -600mV.A VCE saturation (Max) of 600mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.This device can take an input voltage of 50V volts before it breaks down.When collector current reaches its maximum, it can reach 500mA volts.

DSA200200L Features


the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 160MHz

DSA200200L Applications


There are a lot of Panasonic Electronic Components DSA200200L applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

In Stock

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