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DNLS412E-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DNLS412E-13
- Package: SOT-223
- Datasheet:
- Stock: 3579
- Description: DNLS412E-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Package / Case | SOT-223 |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Frequency | 150MHz |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 12V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 500 |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
DNLS412E-13 Overview
A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 150MHz.This device can take an input voltage of 12V volts before it breaks down.During maximum operation, collector current can be as low as 4A volts.
DNLS412E-13 Features
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DNLS412E-13 Applications
There are a lot of Diodes Incorporated DNLS412E-13 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
