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DMN63D8LDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DMN63D8LDW-7
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 9539
- Description: DMN63D8LDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 6.010099mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DMN63D8L |
| Reference Standard | AEC-Q101 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Turn On Delay Time | 3.3 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.8 Ω @ 250mA, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 870nC @ 10V |
| Rise Time | 3.2ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 6.3 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 220mA |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 4.5Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
DMN63D8LDW-7 Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMN63D8LDW-7 Features
· Dual N-Channel MOSFET
· Low On-Resistance
· Low Input Capacitance
· Fast Switching Speed
· Small Surface Mount Package
· ESD Protected Gate
· Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
· Halogen and Antimony Free. “Green” Device (Note 3)
· For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified
facilities), please contact us or your local Diodes
representative.
DMN63D8LDW-7 Applications
· DC-DC Converters
· Power Management Functions
· Battery Operated Systems and Solid-State Relays
· Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
