DMN32D2LV-7

Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563


  • Manufacturer: Diodes Incorporated
  • NO: 233-DMN32D2LV-7
  • Package: SOT-563, SOT-666
  • Datasheet: pdf
  • Stock: 7591
  • Description: Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563(Kg)

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SPECIFICATIONS

Parameters
Rds On (Max) @ Id, Vgs 1.2 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 39pF @ 3V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 400mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.4A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 600μm
Length 1.6mm
Width 1.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 400mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMN32D2LV
Pin Count 6
JESD-30 Code R-PDSO-F6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING

In Stock

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