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DMJT9435-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DMJT9435-13
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 5542
- Description: DMJT9435-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 24 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 160MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Power - Max | 1.2W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 160MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 160MHz |
| Collector Emitter Saturation Voltage | -550mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
DMJT9435-13 Overview
DC current gain in this device equals 125 @ 800mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -550mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 550mV @ 300mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 160MHz.There is a breakdown input voltage of 30V volts that it can take.In extreme cases, the collector current can be as low as 3A volts.
DMJT9435-13 Features
the DC current gain for this device is 125 @ 800mA 1V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
DMJT9435-13 Applications
There are a lot of Diodes Incorporated DMJT9435-13 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
