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ContactDMG1016UDW-7
DMG1016UDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DMG1016UDW-7
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 7089
- Description: DMG1016UDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 6.010099mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 750mOhm |
| Additional Feature | HIGH RELIABILITY |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Base Part Number | DMG1016UDW |
| Pin Count | 6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 330mW |
| Turn On Delay Time | 5.1 ns |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 450m Ω @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 60.67pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.07A 845mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 4.5V |
| Rise Time | 7.4ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 12.3 ns |
| Turn-Off Delay Time | 26.7 ns |
| Continuous Drain Current (ID) | -845mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 6V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
DMG1016UDW-7 Description
The DMG1016UDW-7 is a new generation MOSFET designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
DMG1016UDW-7 Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
DMG1016UDW-7 Applications
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistor
