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MOSFET N/P-CH 20V SOT963
- Manufacturer: Diodes Incorporated
- NO: 233-DMC2990UDJ-7
- Package: SOT-963
- Datasheet:
- Stock: 8426
- Description: MOSFET N/P-CH 20V SOT963(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Length | 1.05mm |
| Width | 850μm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-963 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Base Part Number | DMC2990 |
| Reference Standard | AEC-Q101 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 5.8 ns |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 990m Ω @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 27.6pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 450mA 310mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.5nC @ 4.5V |
| Rise Time | 5.7ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 16.4 ns |
| Turn-Off Delay Time | 31.1 ns |
| Continuous Drain Current (ID) | 310mA |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 0.31A |
| Drain-source On Resistance-Max | 0.99Ohm |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 450μm |
