DMC1029UFDB-7

MOSFET N/P-CH 12V 6UDFN


  • Manufacturer: Diodes Incorporated
  • NO: 233-DMC1029UFDB-7
  • Package: 6-UDFN Exposed Pad
  • Datasheet: pdf
  • Stock: 3743
  • Description: MOSFET N/P-CH 12V 6UDFN(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Input Capacitance (Ciss) (Max) @ Vds 914pF @ 6V
Current - Continuous Drain (Id) @ 25°C 5.6A 3.8A
Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 8V
Drain to Source Voltage (Vdss) 12V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 3.8A
Drain-source On Resistance-Max 0.029Ohm
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 1.4W
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA

In Stock

Please send RFQ , we will respond immediately.