DF23MR12W1M1B11BOMA1

MOSFET MODULE 1200V 25A


  • Manufacturer: Infineon Technologies
  • NO: 376-DF23MR12W1M1B11BOMA1
  • Package: Module
  • Datasheet: pdf
  • Stock: 1494
  • Description: MOSFET MODULE 1200V 25A(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Operating Temperature -40°C~150°C TJ
Packaging Tray
Published 2008
Series CoolSiC™+
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Power - Max 20mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id 5.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 800V
Current - Continuous Drain (Id) @ 25°C 25A
Gate Charge (Qg) (Max) @ Vgs 620nC @ 15V
Drain to Source Voltage (Vdss) 1200V 1.2kV
FET Feature Silicon Carbide (SiC)
Drain to Source Resistance 45mOhm
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.