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DCP55-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DCP55-13
- Package: SOT-223
- Datasheet:
- Stock: 3770
- Description: DCP55-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| DC Current Gain-Min (hFE) | 25 |
| Continuous Collector Current | 1A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Package / Case | SOT-223 |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Polarity | NPN, PNP |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 1A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 60V |
DCP55-13 Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.The breakdown input voltage is 60V volts.Collector current can be as low as 1A volts at its maximum.
DCP55-13 Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
DCP55-13 Applications
There are a lot of Diodes Incorporated DCP55-13 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
