DCP53-13

DCP53-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-DCP53-13
  • Package: SOT-223
  • Datasheet: pdf
  • Stock: 9127
  • Description: DCP53-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Collector Emitter Breakdown Voltage 80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Continuous Collector Current -1A
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mount Surface Mount
Package / Case SOT-223
Number of Pins 4
Weight 7.994566mg
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Polarity PNP
Element Configuration Single
Gain Bandwidth Product 200MHz
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A

DCP53-13 Overview


A collector emitter saturation voltage of -500mV allows maximum design flexibility.Continuous collector voltages of -1A should be maintained to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.200MHz is present in the transition frequency.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

DCP53-13 Features


a collector emitter saturation voltage of -500mV
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DCP53-13 Applications


There are a lot of Diodes Incorporated DCP53-13 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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