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D45H2A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-D45H2A
- Package: TO-220-3
- Datasheet:
- Stock: 4136
- Description: D45H2A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | CONSULT SALES OFFICE (Last Updated: 1 week ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 60W |
| Current Rating | -8A |
| Frequency | 25MHz |
| Base Part Number | D45H |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 25MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 8A 5V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 25MHz |
| Collector Emitter Saturation Voltage | 1V |
| Emitter Base Voltage (VEBO) | 1.5V |
| hFE Min | 100 |
| Height | 9.2mm |
| Length | 9.9mm |
| Width | 4.5mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
D45H2A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 8A 5V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 1.5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.There is a transition frequency of 25MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
D45H2A Features
the DC current gain for this device is 100 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 1.5V
the current rating of this device is -8A
a transition frequency of 25MHz
D45H2A Applications
There are a lot of ON Semiconductor D45H2A applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
