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D44H11TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-D44H11TU
- Package: TO-220-3
- Datasheet:
- Stock: 9229
- Description: D44H11TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A 1V |
| Current - Collector Cutoff (Max) | 10μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 1V |
| Max Breakdown Voltage | 300V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Height | 16.51mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.67W |
| Frequency | 50MHz |
| Base Part Number | D44H |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.67W |
| Power - Max | 60W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
D44H11TU Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 10A volts at its maximum.
D44H11TU Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
D44H11TU Applications
There are a lot of ON Semiconductor D44H11TU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
