CY62177EV30LL-55BAXI

Surface Mount MoBL® 48 Pin Memory IC MoBL® Series CY62177 32 Mb kb 9.5mm mm 45mA mA


  • Manufacturer: Cypress Semiconductor Corp
  • NO: 217-CY62177EV30LL-55BAXI
  • Package: 48-TFBGA
  • Datasheet: pdf
  • Stock: 2270
  • Description: Surface Mount MoBL® 48 Pin Memory IC MoBL® Series CY62177 32 Mb kb 9.5mm mm 45mA mA (Kg)

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  • Delivery: Delivery
  • Payment: payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 48-TFBGA
Number of Pins 48
Operating Temperature -40°C~85°C TA
Packaging Tray
Series MoBL®
Published 2001
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology SRAM - Asynchronous
Voltage - Supply 2.2V~3.7V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.75mm
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number CY62177
Pin Count 48
Operating Supply Voltage 3V
Supply Voltage-Max (Vsup) 3.7V
Supply Voltage-Min (Vsup) 2.2V
Memory Size 32Mb 4M x 8 2M x 16
Number of Ports 1
Nominal Supply Current 45mA
Memory Type Volatile
Memory Format SRAM
Memory Interface Parallel
Output Characteristics 3-STATE
Memory Width 16
Write Cycle Time - Word, Page 55ns
Address Bus Width 21b
Density 32 Mb
Access Time (Max) 55 ns
I/O Type COMMON
Sync/Async Asynchronous
Alternate Memory Width 8
Ambient Temperature Range High 85°C
Height 1.2mm
Length 9.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.