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CSD88537NDT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD88537NDT
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3112
- Description: CSD88537NDT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 15ns |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 5 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain-source On Resistance-Max | 0.019Ohm |
| Drain to Source Breakdown Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Standard |
| Height | 1.75mm |
| Length | 4.9mm |
| Width | 3.91mm |
| Thickness | 1.58mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 540.001716mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 2.1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD88537 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Turn On Delay Time | 6 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 30V |
CSD88537NDT Description
The dual SO-8.60V.12.5m Ω NexFETM power MOSFET is designed for half-bridge applications in small current motor control applications.
CSD88537NDT Features
·Ultra-Low Qg and Qgd
Avalanche Rated
Pb Free
·RoHS Compliant
Halogen Free
CSD88537NDT Applications
·Half Bridge for Motor Control
Synchronous Buck Converter
