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ContactCSD87502Q2
MOSFET 30V Dual N-Ch Common Drain NexFET
- Manufacturer: Texas Instruments
- NO: 815-CSD87502Q2
- Package: 6-WDFN Exposed Pad
- Datasheet:
- Stock: 1088
- Description: MOSFET 30V Dual N-Ch Common Drain NexFET(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 2.3W |
| Terminal Form | NO LEAD |
| Base Part Number | CSD87502 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 32.4m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 353pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | 5A |
| Drain Current-Max (Abs) (ID) | 5A |
| Pulsed Drain Current-Max (IDM) | 23A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 3.1 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Feedback Cap-Max (Crss) | 29 pF |
| Length | 2mm |
| Width | 2mm |
| Thickness | 750μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
