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MOSFET 2 N-CHANNEL 30V 8WSON
- Manufacturer: Texas Instruments
- NO: 815-CSD87313DMST
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 9544
- Description: MOSFET 2 N-CHANNEL 30V 8WSON(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Drain to Source Resistance | 5.5mOhm |
| Feedback Cap-Max (Crss) | 200 pF |
| Length | 3.3mm |
| Width | 3.3mm |
| Thickness | 750μm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Additional Feature | AVALANCHE RATED |
| Terminal Form | NO LEAD |
| Base Part Number | CSD87313 |
| Number of Elements | 2 |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Power - Max | 2.7W |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Transistor Application | SWITCHING |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4290pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Avalanche Energy Rating (Eas) | 67 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
