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CSD87312Q3E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD87312Q3E
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 8751
- Description: CSD87312Q3E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | NexFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 7 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Powers |
| Max Power Dissipation | 2.5W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD87312 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 7.8 ns |
| FET Type | 2 N-Channel (Dual) Common Source |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 7A , 8V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 2.8 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 27A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 45A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 16 pF |
| Length | 3.3mm |
| Width | 3.3mm |
| Thickness | 900μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
CSD87312Q3E Description
A dual N-channel, 30V common-source device designed for adaptor/USB input protection is the CSD87312Q3E. For multi-cell battery charging applications where space is limited, this SON 3.3 x 3.3mm device provides low drain to drain on-resistanee that reduces losses and delivers low comp orient count.
CSD87312Q3E Features
? Connectivity via a Common Source
? Extremely Low Drain to Drain-On Resistance
? SON 3.3 x 3.3mm Plastic Package for Saving Space
? Perfect for a 5V gate drive
? High Thermal Conductivity
? Rated for Avalanches
? Plating for Pb-free terminals
? RoHS conformant
? Free of Halogen
CSD87312Q3E Applications
Adaptor
USB input security for tablets and laptops
