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CSD86330Q3D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD86330Q3D
- Package: 8-PowerLDFN
- Datasheet:
- Stock: 9740
- Description: CSD86330Q3D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Length | 3.3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Contact Plating | Tin |
| Radiation Hardening | No |
| Number of Pins | 8 |
| Package / Case | 8-PowerLDFN |
| REACH SVHC | No SVHC |
| Height | 1.5mm |
| Width | 3.3mm |
| Thickness | 1.5mm |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C TJ |
| Number of Functions | 1 |
| JESD-609 Code | e3 |
| Peak Reflow Temperature (Cel) | 260 |
| Supply Voltage | 12V |
| Base Part Number | CSD86330 |
| Pin Count | 8 |
| Terminal Pitch | 0.65mm |
| Supply Voltage-Max (Vsup) | 22V |
| Max Power Dissipation | 6W |
| Element Configuration | Dual |
| Power Dissipation | 6W |
| Turn On Delay Time | 5.3 ns |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
| Threshold Voltage | 1.4V |
| Continuous Drain Current (ID) | 20A |
| Turn-Off Delay Time | 15.8 ns |
| FET Type | 2 N-Channel (Half Bridge) |
| Rds On (Max) @ Id, Vgs | 9.6m Ω @ 14A, 8V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 25V |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.4 V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Characteristics | STANDARD |
| High Side Driver | NO |
CSD86330Q3D Description
The CSD86330Q3D NexFETM power module is optimized for synchronous locking applications and provides high current, efficiency, and high frequency performance in a small form factor of 3.3 mm x 3.3 mm. Optimized for 5V gate driver applications this product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver.
CSD86330Q3D Features
Half-Bridge Power Block
90% System Efficiency at 15A Up to 20 A Operation
High Frequency Operation(Up To1.5 MHz)
High Density-SON 3.3mmx3.3mm Footprint Optimized for 5 V Gate Drive Low Switching Losses
Uitra Low Inductance Package RoHS Compliant Halogen Free
Pb-Free Terminal Plating
CSD86330Q3D Applications
Synchronous Buck Converters -High Frequency Applications
- High CurrentLow Duty CycleApplications Multiphase Synchronous Buck Converters POL DC-DC Converters
IMVP,VRM,and VRD Applications
