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CSD86311W1723 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD86311W1723
- Package: 12-UFBGA, DSBGA
- Datasheet:
- Stock: 9452
- Description: CSD86311W1723 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Pin Count | 12 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 5.4 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 39m Ω @ 2A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 585pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Rise Time | 4.3ns |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time (Typ) | 2.9 ns |
| Turn-Off Delay Time | 13.2 ns |
| Continuous Drain Current (ID) | 4.5A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 10V |
| Drain-source On Resistance-Max | 0.051Ohm |
| Drain to Source Breakdown Voltage | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Feedback Cap-Max (Crss) | 13 pF |
| Height | 625μm |
| Length | 0m |
| Width | 0m |
| Thickness | 375μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 12-UFBGA, DSBGA |
| Number of Pins | 12 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.5W |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD86311 |
CSD86311W1723 Description
The device's design aims to produce the lowest gate charge and on-resistance while maintaining the best thermal performance in an extremely low profile. The device is best for battery-operated space-constrained applications in load management and DC-DC converters because to its low on-state and gate charge as well as its tiny footprint and low profile.
CSD86311W1723 Features
?N-Ch dual MOSFETs
?Regular Source Configuration
?Miniature Footprint 1.7 x 2.3 mm
?Lowest Possible Qg and Qgd
?Bp Free
? RoHS conformant
?Free of Halogen
CSD86311W1723 Applications
?Management of batteries
?Battery Security
?Convertor DC-DC
