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CSD85301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD85301Q2
- Package: 6-WDFN Exposed Pad
- Datasheet:
- Stock: 9126
- Description: CSD85301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 9.695537mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 2.3W |
| Terminal Form | NO LEAD |
| Base Part Number | CSD85301 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 27m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 469pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| Rise Time | 26ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain-source On Resistance-Max | 0.039Ohm |
| Avalanche Energy Rating (Eas) | 3.8 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate, 5V Drive |
| Height | 800μm |
| Length | 2mm |
| Width | 2mm |
| Thickness | 750μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
CSD85301Q2 Description
The CSD8530102 is a 20V23mQ N-Channe device in SON2X2 mm plastic package and dual independent MOSFET. The two FET are designed as half-bridge structures for synchronous buck and other power applications. In addition, the device can be used in adapters, USB input protection and battery charging applications. The dual field effect transistor has a low drain-to-source turn-on resistance that minimizes loss and loss.
There are fewer parts with limited space.
CSD85301Q2 Features
Low On-Resistance
Dual Independent MOSFETs
Space Saving SON2x2 mm Plastic Package
Optimized for 5 V Gate Driver
Avalanche Rated
Pb and Halogen Free
RoHS Compliant
CSD85301Q2 Applications
Point-of-Load Synchronous Buck Converter for Applications in NetworkingTelecom.and Computing Systems
Adaptor or USB Input Protection for Notebook PCs and Tablets
Battery Protection
