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CSD75207W15 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD75207W15
- Package: 9-UFBGA, DSBGA
- Datasheet:
- Stock: 6069
- Description: CSD75207W15 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 9-UFBGA, DSBGA |
| Number of Pins | 9 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 700mW |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Base Part Number | CSD75207 |
| Operating Mode | -0.8 |
| Turn On Delay Time | 12.8 ns |
| FET Type | 2 P-Channel (Dual) Common Source |
| Rds On (Max) @ Id, Vgs | 162m Ω @ 1A, 1.8V |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 595pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 4.5V |
| Rise Time | 8.6ns |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 32.1 ns |
| Continuous Drain Current (ID) | 3.9A |
| Gate to Source Voltage (Vgs) | -6V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 625μm |
| Length | 1.75mm |
| Width | 1.75mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
CSD75207W15 Description
CSD75207W15 devices want to provide the lowest on-resistance and gate charge in the smallest configuration and have good thermal characteristics at ultra-low voltage. Low resistance, small footprint and low profile make the device Ideal choice for limited battery-powered space.Apply. The device also obtained US patents of 7952145，7420247，7235845 and 6600182.
CSD75207W15 Features
Dual P-Channel MOSFETs
Common Source Configuration
Small Footprint1.5-mmx1.5-mm
Gate-Source Voltage Clamp
Gate ESD Protection>4 kV
-HBM JEDEC standard JESD22-A114
Pb and Halogen Free
·RoHS Compliant
CSD75207W15 Applications
Battery Management Battery Protection
Load and Input Switching
