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DUAL P CH POWER MOSFET, -20V, -3A, DSBGA-9 - More Details
- Manufacturer: Texas Instruments
- NO: 815-CSD75204W15
- Package: 9-UFBGA, DSBGA
- Datasheet:
- Stock: 3809
- Description: DUAL P CH POWER MOSFET, -20V, -3A, DSBGA-9 - More Details(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 9-UFBGA, DSBGA |
| Number of Pins | 9 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 700mW |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Base Part Number | CSD75204 |
| Pin Count | 9 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 700mW |
| Turn On Delay Time | 7.8 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 4.5V |
| Rise Time | 6.7ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 26 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | -3A |
| Threshold Voltage | -700mV |
| Gate to Source Voltage (Vgs) | -6V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 80mOhm |
| Nominal Vgs | -700 mV |
| Feedback Cap-Max (Crss) | 55 pF |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
