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CPH6123-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-CPH6123-TL-E
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 7876
- Description: CPH6123-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 1.3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| Base Part Number | CPH6123 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 390MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 100mA, 2A |
| Collector Emitter Breakdown Voltage | 50V |
| Max Frequency | 390MHz |
| Transition Frequency | 390MHz |
| Collector Emitter Saturation Voltage | -240mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | -6V |
| Height | 900μm |
| Length | 2.9mm |
| Width | 1.6mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
CPH6123-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.A collector emitter saturation voltage of -240mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 100mA, 2A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.As a result, the part has a transition frequency of 390MHz.The breakdown input voltage is 50V volts.A maximum collector current of 3A volts can be achieved.
CPH6123-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 650mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 390MHz
CPH6123-TL-E Applications
There are a lot of ON Semiconductor CPH6123-TL-E applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
