CP736V-2N5401-CT20

CP736V-2N5401-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at Feilidi


  • Manufacturer: Central Semiconductor Corp
  • NO: 154-CP736V-2N5401-CT20
  • Package: Die
  • Datasheet: pdf
  • Stock: 9613
  • Description: CP736V-2N5401-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -65°C~150°C TJ
Packaging Tray
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant

CP736V-2N5401-CT20 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Product comes in Die supplier package.Single BJT transistor shows a 150V maximal voltage - Collector EmSingle BJT transistorter Breakdown.A maximum collector current of 600mA volts is possible.

CP736V-2N5401-CT20 Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of Die

CP736V-2N5401-CT20 Applications


There are a lot of Central Semiconductor Corp CP736V-2N5401-CT20 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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