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CP336V-2N5551-CT
  • CP336V-2N5551-CT

CP336V-2N5551-CT

CP336V-2N5551-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at Feilidi


  • Manufacturer: Central Semiconductor Corp
  • NO: 154-CP336V-2N5551-CT
  • Package: Die
  • Datasheet: pdf
  • Stock: 552
  • Description: CP336V-2N5551-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -65°C~150°C TJ
Packaging Tray
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Voltage - Collector Emitter Breakdown (Max) 160V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 300MHz

CP336V-2N5551-CT Overview


This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.Die is the supplier device package for this product.There is a 160V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

CP336V-2N5551-CT Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the supplier device package of Die

CP336V-2N5551-CT Applications


There are a lot of Central Semiconductor Corp CP336V-2N5551-CT applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver
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