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CP127-2N6301-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at Feilidi
- Manufacturer: Central Semiconductor Corp
- NO: 154-CP127-2N6301-CT
- Package: Die
- Datasheet:
- Stock: 7881
- Description: CP127-2N6301-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2017 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Collector Emitter Breakdown Voltage | 80V |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 8A |
| Frequency - Transition | 4MHz |
| RoHS Status | ROHS3 Compliant |
CP127-2N6301-CT Overview
This device has a DC current gain of 750 @ 4A 3V, which is the ratio between the base current and the collector current.When VCE saturation is 3V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Die is the supplier device package for this product.The device has a 80V maximal voltage - Collector Emitter Breakdown.Maximum collector currents can be below 8A volts.
CP127-2N6301-CT Features
the DC current gain for this device is 750 @ 4A 3V
the vce saturation(Max) is 3V @ 80mA, 8A
the supplier device package of Die
CP127-2N6301-CT Applications
There are a lot of Central Semiconductor Corp CP127-2N6301-CT applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
