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ContactCG2H30070F
CG2H30070F datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Cree/Wolfspeed stock available at Feilidi
- Manufacturer: Cree/Wolfspeed
- NO: 163-CG2H30070F
- Package: -
- Datasheet:
- Stock: 845
- Description: CG2H30070F datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Cree/Wolfspeed stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Published | 2017 |
| Series | GaN |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Transistor Type | HEMT |
| Power - Output | 75W |
| Voltage - Test | 28V |
CG2H30070F Description
The CG2H30070F is a Radar Product, CW & Pulsed. The GaN HEMT devices from Wolfspeed are excellent for CW and pulsed applications. The L, S, C, and X-Band applications are catered for by the packed discrete GaN HEMT devices. The L, C, S, and X bands are intended for use with the GaN HEMT MMIC 50-ohm amplifiers. We have a large selection of high-efficiency GaN HEMT transistors and amplifiers in our portfolio that operate at 28 V, 40 V, and 50 V for pulsed-through CW applications.
CG2H30070F Features
High power density
High-frequency operation
High breakdown voltage
GaN-on-SiC technology
Wide-band performance
Reduction of heat-sink requirements
SiC substrate provides the best thermal performance
High reliability
Higher efficiency
CG2H30070F Applications
GaN HEMT Transistors & MMICs for L, S, C and X-Band Applications
