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MOSFET 6N-CH 1200V 87A MODULE
- Manufacturer: Cree/Wolfspeed
- NO: 163-CCS050M12CM2
- Package: Module
- Datasheet:
- Stock: 3546
- Description: MOSFET 6N-CH 1200V 87A MODULE(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 19 Weeks |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 28 |
| Supplier Device Package | Module |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2013 |
| Series | Z-FET™ Z-Rec™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 337W |
| Number of Elements | 6 |
| Number of Channels | 6 |
| Power Dissipation | 312W |
| Turn On Delay Time | 21 ns |
| Power - Max | 337W |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Vgs(th) (Max) @ Id | 2.3V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2.810nF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 87A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 20V |
| Rise Time | 19ns |
| Drain to Source Voltage (Vdss) | 1200V 1.2kV |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 87A |
| Threshold Voltage | 2.3V |
| Gate to Source Voltage (Vgs) | 25V |
| Reverse Voltage | 1.2kV |
| Drain to Source Breakdown Voltage | 1.2kV |
| Input Capacitance | 2.81nF |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Resistance | 25mOhm |
| Rds On Max | 34 mΩ |
| Height | 17.5mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | RoHS Compliant |
