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ContactC2M1000170D
SiCFET (Silicon Carbide) N-Channel Tube 1.1Ohm @ 2A, 20V +25V, -10V 191pF @ 1000V 13nC @ 20V 1700V TO-247-3
- Manufacturer: Cree/Wolfspeed
- NO: 163-C2M1000170D
- Package: TO-247-3
- Datasheet:
- Stock: 11505
- Description: SiCFET (Silicon Carbide) N-Channel Tube 1.1Ohm @ 2A, 20V +25V, -10V 191pF @ 1000V 13nC @ 20V 1700V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-247-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | Z-FET™ |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | SiCFET (Silicon Carbide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 69W Tc |
| Element Configuration | Single |
| Power Dissipation | 69W |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 2.4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 191pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 20V |
| Rise Time | 46ns |
| Drain to Source Voltage (Vdss) | 1700V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 15 ns |
| Evaluation Kit | Yes |
| Continuous Drain Current (ID) | 4.9A |
| Threshold Voltage | 2.4V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 191pF |
| Drain to Source Resistance | 950mOhm |
| Rds On Max | 1.1 Ω |
| Nominal Vgs | 2.4 V |
| Height | 21.1mm |
| Length | 16.13mm |
| Width | 5.21mm |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
