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BUV22 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUV22
- Package: TO-204AE
- Datasheet:
- Stock: 2667
- Description: BUV22 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-204AE |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2006 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 250V |
| Max Power Dissipation | 250W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 40A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 8MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1.5V |
| Max Collector Current | 40A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A 4V |
| Current - Collector Cutoff (Max) | 3mA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2.5A, 20A |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 8MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Base Voltage (VCBO) | 300V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 20 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
BUV22 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 10A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 2.5A, 20A.With the emitter base voltage set at 7V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 40A.There is a transition frequency of 8MHz in the part.A maximum collector current of 40A volts can be achieved.
BUV22 Features
the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2.5A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 40A
a transition frequency of 8MHz
BUV22 Applications
There are a lot of ON Semiconductor BUV22 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
