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BUV21G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUV21G
- Package: TO-204AE
- Datasheet:
- Stock: 6394
- Description: BUV21G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Package / Case | TO-204AE |
| Number of Pins | 2 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2005 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 200V |
| Max Power Dissipation | 250W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 40A |
| Frequency | 8MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 8MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 200V |
| Max Collector Current | 40A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 12A 2V |
| Current - Collector Cutoff (Max) | 3mA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3A, 25A |
| Collector Emitter Breakdown Voltage | 200V |
| Transition Frequency | 8MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Base Voltage (VCBO) | 250V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 20 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
BUV21G Overview
In this device, the DC current gain is 20 @ 12A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 3A, 25A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 40A.A transition frequency of 8MHz is present in the part.When collector current reaches its maximum, it can reach 40A volts.
BUV21G Features
the DC current gain for this device is 20 @ 12A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3A, 25A
the emitter base voltage is kept at 7V
the current rating of this device is 40A
a transition frequency of 8MHz
BUV21G Applications
There are a lot of ON Semiconductor BUV21G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
