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BULB7216T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-BULB7216T4
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 7398
- Description: BULB7216T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 80W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BULB721 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 80W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 700V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4 @ 2A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 800mA |
| Collector Emitter Breakdown Voltage | 700V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 7 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
BULB7216T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4 @ 2A 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 80mA, 800mA.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.During maximum operation, collector current can be as low as 3A volts.
BULB7216T4 Features
the DC current gain for this device is 4 @ 2A 5V
the vce saturation(Max) is 3V @ 80mA, 800mA
the emitter base voltage is kept at 12V
BULB7216T4 Applications
There are a lot of STMicroelectronics BULB7216T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
