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NPN150°C TJ100μA1 ElementsTO-263-3, D2Pak (2 Leads + Tab), TO-263ABTubeSurface Mount
- Manufacturer: STMicroelectronics
- NO: 761-BULB39D-1
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 2630
- Description: NPN150°C TJ100μA1 ElementsTO-263-3, D2Pak (2 Leads + Tab), TO-263ABTubeSurface Mount(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Base Part Number | BULB39 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 70W |
| Power - Max | 70W |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 500mA, 2.5A |
| Collector Emitter Breakdown Voltage | 450V |
| Voltage - Collector Emitter Breakdown (Max) | 450V |
| Current - Collector (Ic) (Max) | 4A |
| Collector Base Voltage (VCBO) | 800V |
| Emitter Base Voltage (VEBO) | 9V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
BULB39D-1 Overview
This device has a DC current gain of 10 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.Single BJT transistor comes in a supplier device package of D2PAK.Collector Emitter Breakdown occurs at 450VV - Maximum voltage.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BULB39D-1 Features
the DC current gain for this device is 10 @ 10mA 5V
the vce saturation(Max) is 1.1V @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the supplier device package of D2PAK
BULB39D-1 Applications
There are a lot of STMicroelectronics BULB39D-1 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
