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BUL642D2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUL642D2G
- Package: TO-220-3
- Datasheet:
- Stock: 5712
- Description: BUL642D2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | 825V |
| Emitter Base Voltage (VEBO) | 11V |
| hFE Min | 16 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT-IN EFFICIENT ANTISATURATION NETWORK |
| Subcategory | Other Transistors |
| Max Power Dissipation | 75W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 13MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1.5V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 16 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 200μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 440V |
| Current - Collector (Ic) (Max) | 3A |
| Transition Frequency | 13MHz |
| Collector Emitter Saturation Voltage | 1.5V |
BUL642D2G Overview
In this device, the DC current gain is 16 @ 500mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 200mA, 2A.An emitter's base voltage can be kept at 11V to gain high efficiency.The part has a transition frequency of 13MHz.The maximum collector current is 3A volts.
BUL642D2G Features
the DC current gain for this device is 16 @ 500mA 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 200mA, 2A
the emitter base voltage is kept at 11V
a transition frequency of 13MHz
BUL642D2G Applications
There are a lot of ON Semiconductor BUL642D2G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
