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BUL45 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUL45
- Package: TO-220-3
- Datasheet:
- Stock: 10090
- Description: BUL45 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 75W |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BUL45 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 75W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 12MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 300mA 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 400mA, 2A |
| Collector Emitter Breakdown Voltage | 400V |
| Max Frequency | 12MHz |
| Transition Frequency | 12MHz |
| Collector Emitter Saturation Voltage | 890mV |
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 14 |
| Height | 9.28mm |
| Length | 10.28mm |
| Width | 4.82mm |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
BUL45 Overview
This device has a DC current gain of 14 @ 300mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 890mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 9V to achieve high efficiency.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.12MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 5A volts.
BUL45 Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 890mV
the vce saturation(Max) is 400mV @ 400mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 12MHz
BUL45 Applications
There are a lot of ON Semiconductor BUL45 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
