BUL44G

BUL44G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BUL44G
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 9487
  • Description: BUL44G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 17 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
Series SWITCHMODE™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 13MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 13MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 200mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 1A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 13MHz
Collector Emitter Saturation Voltage 920mV
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 7
Height 9.28mm
Length 10.28mm
Width 4.82mm
RoHS Status RoHS Compliant
Lead Free Lead Free

BUL44G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 14 @ 200mA 5V.With a collector emitter saturation voltage of 920mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200mA, 1A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.In this part, there is a transition frequency of 13MHz.Maximum collector currents can be below 2A volts.

BUL44G Features


the DC current gain for this device is 14 @ 200mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 600mV @ 200mA, 1A
the emitter base voltage is kept at 9V
the current rating of this device is 2A
a transition frequency of 13MHz

BUL44G Applications


There are a lot of ON Semiconductor BUL44G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

In Stock

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