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PNP150°C TJ100μA1 Elements3 TerminationsSILICONPNPTO-220-3TubeThrough Hole
- Manufacturer: STMicroelectronics
- NO: 761-BUL3P5
- Package: TO-220-3
- Datasheet:
- Stock: 2550
- Description: PNP150°C TJ100μA1 Elements3 TerminationsSILICONPNPTO-220-3TubeThrough Hole(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 60W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BUL3P5 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 60W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 700mA 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | 500V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 10 |
| RoHS Status | ROHS3 Compliant |
BUL3P5 Overview
This device has a DC current gain of 18 @ 700mA 5V, which is the ratio between the base current and the collector current.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.When collector current reaches its maximum, it can reach 3A volts.
BUL3P5 Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BUL3P5 Applications
There are a lot of STMicroelectronics BUL3P5 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
