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BUL1203EFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-BUL1203EFP
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 7859
- Description: BUL1203EFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 36W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BUL1203 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 36W |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 550V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 9 @ 2A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 3A |
| Collector Emitter Breakdown Voltage | 550V |
| Collector Base Voltage (VCBO) | 1.2kV |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 10 |
| RoHS Status | ROHS3 Compliant |
BUL1203EFP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 9 @ 2A 5V DC current gain.When VCE saturation is 1.5V @ 1A, 3A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 5A volts can be achieved.
BUL1203EFP Features
the DC current gain for this device is 9 @ 2A 5V
the vce saturation(Max) is 1.5V @ 1A, 3A
the emitter base voltage is kept at 9V
BUL1203EFP Applications
There are a lot of STMicroelectronics BUL1203EFP applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
