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BUH51G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUH51G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 1329
- Description: BUH51G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 800V |
| Max Power Dissipation | 50W |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | 3A |
| Frequency | 23MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 50W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 23MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 1A 1V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 500V |
| Transition Frequency | 23MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Base Voltage (VCBO) | 800V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 8 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BUH51G Overview
In this device, the DC current gain is 8 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 23MHz in the part.The maximum collector current is 3A volts.
BUH51G Features
the DC current gain for this device is 8 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 3A
a transition frequency of 23MHz
BUH51G Applications
There are a lot of ON Semiconductor BUH51G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
