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BUH50G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUH50G
- Package: TO-220-3
- Datasheet:
- Stock: 9535
- Description: BUH50G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 500V |
| Max Power Dissipation | 50W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Frequency | 4MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 50W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 2A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 3A |
| Collector Emitter Breakdown Voltage | 160V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 500V |
| Collector Base Voltage (VCBO) | 800V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 7 |
| Height | 15.75mm |
| Length | 10.28mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BUH50G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5 @ 2A 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 3A.An emitter's base voltage can be kept at 9V to gain high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 4MHz in the part.Input voltage breakdown is available at 500V volts.Collector current can be as low as 4A volts at its maximum.
BUH50G Features
the DC current gain for this device is 5 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 1V @ 1A, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
a transition frequency of 4MHz
BUH50G Applications
There are a lot of ON Semiconductor BUH50G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
