BUH150

BUH150 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BUH150
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 4307
  • Description: BUH150 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
Series SWITCHMODE™
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 700V
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 15A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 23MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 10A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 5V @ 4A, 20A
Collector Emitter Breakdown Voltage 700V
Max Frequency 23MHz
Transition Frequency 23MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 10V
hFE Min 4
Height 9.28mm
Length 10.28mm
Width 4.82mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

BUH150 Overview


This device has a DC current gain of 8 @ 10A 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 5V @ 4A, 20A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 23MHz is present in the part.When collector current reaches its maximum, it can reach 15A volts.

BUH150 Features


the DC current gain for this device is 8 @ 10A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 5V @ 4A, 20A
the emitter base voltage is kept at 10V
the current rating of this device is 15A
a transition frequency of 23MHz

BUH150 Applications


There are a lot of ON Semiconductor BUH150 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

In Stock

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