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BUD42DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUD42DG
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8589
- Description: BUD42DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT-IN ANTISATURATION NETWORK |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 350V |
| Max Power Dissipation | 25W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BUD42 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 25W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 2A |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Base Voltage (VCBO) | 650V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 8 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
BUD42DG Overview
This device has a DC current gain of 10 @ 2A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.During maximum operation, collector current can be as low as 4A volts.
BUD42DG Features
the DC current gain for this device is 10 @ 2A 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 1V @ 500mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 2A
BUD42DG Applications
There are a lot of ON Semiconductor BUD42DG applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
