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NPN - Darlington175°C TJ100μA1 Elements2 TerminationsSILICONTO-263-3, D2Pak (2 Leads + Tab), TO-263ABTubeSurface Mount
- Manufacturer: STMicroelectronics
- NO: 761-BUB941ZT
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 3483
- Description: NPN - Darlington175°C TJ100μA1 Elements2 TerminationsSILICONTO-263-3, D2Pak (2 Leads + Tab), TO-263ABTubeSurface Mount(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | Other Transistors |
| Max Power Dissipation | 150W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BUB941 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 5A 10V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 250mA, 10A |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Base Voltage (VCBO) | 5V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 300 |
| Continuous Collector Current | 15A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
BUB941ZT Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 5A 10V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 250mA, 10A.Continuous collector voltage should be kept at 15A for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
BUB941ZT Features
the DC current gain for this device is 300 @ 5A 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 250mA, 10A
the emitter base voltage is kept at 5V
BUB941ZT Applications
There are a lot of STMicroelectronics BUB941ZT applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
