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BUB323ZG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUB323ZG
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 6795
- Description: BUB323ZG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 350V |
| Max Power Dissipation | 150W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 10A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BUB323 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 5A 4.6V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 250mA, 10A |
| Collector Emitter Breakdown Voltage | 350V |
| Transition Frequency | 2MHz |
| Collector Emitter Saturation Voltage | 1.6V |
| Frequency - Transition | 2MHz |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 150 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BUB323ZG Overview
This device has a DC current gain of 500 @ 5A 4.6V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.6V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 250mA, 10A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 10A current rating.As a result, the part has a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BUB323ZG Features
the DC current gain for this device is 500 @ 5A 4.6V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz
BUB323ZG Applications
There are a lot of ON Semiconductor BUB323ZG applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
