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BUB323Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BUB323Z
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 5252
- Description: BUB323Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 350V |
| Max Power Dissipation | 150W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 10A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BUB323 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 1.7V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 5A 4.6V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 250mA, 10A |
| Collector Emitter Breakdown Voltage | 350V |
| Transition Frequency | 2MHz |
| Frequency - Transition | 2MHz |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 500 |
| Continuous Collector Current | 10A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
BUB323Z Overview
DC current gain in this device equals 500 @ 5A 4.6V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.7V @ 250mA, 10A.Continuous collector voltage should be kept at 10A for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BUB323Z Features
the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz
BUB323Z Applications
There are a lot of ON Semiconductor BUB323Z applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
