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BU508AW datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-BU508AW
- Package: TO-247-3
- Datasheet:
- Stock: 218
- Description: BU508AW datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 125W |
| Base Part Number | BU508 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 125W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 700V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 200μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1.6A, 4.5A |
| Collector Emitter Breakdown Voltage | 700V |
| Collector Emitter Saturation Voltage | 1V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 10 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 24.45mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
BU508AW Overview
In this device, the DC current gain is 10 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics BU508AW applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
