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BSZ215CHXTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSZ215CHXTMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 1003
- Description: BSZ215CHXTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 2.5W |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 2 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N and P-Channel Complementary |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 110μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 419pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A 3.2A |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Continuous Drain Current (ID) | 3.2A |
| Max Dual Supply Voltage | -20V |
| Drain Current-Max (Abs) (ID) | 5.1A |
| Drain-source On Resistance-Max | 0.055Ohm |
| Pulsed Drain Current-Max (IDM) | 20A |
| Avalanche Energy Rating (Eas) | 11 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate, 2.5V Drive |
BSZ215CHXTMA1 Description
Fifth Generation HEXFETs from International Rectifier feature an incredibly low on-resistance per silicon area because to innovative production processes. In addition to the high switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, this feature gives the design an extremely efficient and reliable device for usage in a range of applications. Thanks to its improved thermal properties and multiple-die capacity, the SO-8 is the best choice for a variety of power applications. This alteration was made feasible by the use of a lead frame that was specially created. This invention allows for the usage of several devices while requiring noticeably less board space. The package is designed to function with wave or vapor phase infrared soldering methods.
BSZ215CHXTMA1 Features
P + N complementary channel
Improvement mode
Level Super Logic (2.5V rated)
Common sewer
Rated Avalanche
operating temperature of 175 ??C
According to AEC Q101, qualified
BSZ215CHXTMA1 Applications
Switching applications
