BSZ15DC02KDHXTMA1

BSZ15DC02KDHXTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-BSZ15DC02KDHXTMA1
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 3967
  • Description: BSZ15DC02KDHXTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, HEXFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANHE RATED
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 2.5W
FET Type N and P-Channel Complementary
Rds On (Max) @ Id, Vgs 55m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 110μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.1A 3.2A
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage 20V
Drain Current-Max (Abs) (ID) 5.1A
Drain-source On Resistance-Max 0.055Ohm
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 11 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 2.5V Drive
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSZ15DC02KDHXTMA1 Description


Innovative manufacturing techniques enable International Rectifier's Fifth Generation HEXFETs to have exceptionally low on-resistance per silicon area. This characteristic gives the design an extremely efficient and dependable device for use in a variety of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for. The SO-8 is the ideal option for a multitude of power applications thanks to its enhanced thermal characteristics and multiple-die capacity. Due to the employment of a specially designed leadframe, this change was made possible. With this invention, multiple devices can be used while substantially less board area is needed. The package is made to work with vapor phase infrared or wave soldering techniques.



BSZ15DC02KDHXTMA1 Features


  • P + N complementary channel

  • Improvement mode

  • Level Super Logic (2.5V rated)

  • Common sewer

  • Rated Avalanche

  • operating temperature of 175 ??C

  • According to AEC Q101, qualified

  • 100 percent lead-free; compliant with RoHS



BSZ15DC02KDHXTMA1 Applications


Switching applications


In Stock

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